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Uniformity study of wafer-scale InP-to-silicon hybrid integration

Identifieur interne : 002174 ( Main/Repository ); précédent : 002173; suivant : 002175

Uniformity study of wafer-scale InP-to-silicon hybrid integration

Auteurs : RBID : Pascal:11-0245400

Descripteurs français

Pascal (Inist)
- Fixation pastille, Méthode non destructive, Microscopie acoustique, Photoluminescence, Diffraction RX, Microscopie électronique transmission, Technologie semiconducteur, Phosphure d'indium, Silicium, Superréseau, Tranfert epitaxique.

English descriptors

KwdEn :
- Acoustic microscopy, Indium phosphide, Non destructive method, Photoluminescence, Semiconductor technology, Silicon, Superlattice, Transmission electron microscopy, Wafer bonding, X ray diffraction.

Abstract

In this paper we study the uniformity of up to 150 mm in diameter wafer-scale III-V epitaxial transfer to the Si-on-insulator substrate through the O₂ plasma-enhanced low-temperature (300°C) direct wafer bonding. Void-free bonding is demonstrated by the scanning acoustic microscopy with sub-μm resolution. The photoluminescence (PL) map shows less than 1 nm change in average peak wavelength, and even improved peak intensity (4% better) and full width at half maximum (41 % better) after 150 mm in diameter epitaxial transfer. Small and uniformly distributed residual strain in all sizes of bonding, which is measured by high-resolution X-ray diffraction Omega-2Theta mapping, and employment of a two-period InP- InGaAsP superlattice at the bonding interface contributes to the improvement of PL response. Preservation of multiple quantum-well integrity is also verified by high-resolution transmission electron microscopy.

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Pascal:11-0245400

Le document en format XML

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<author><name sortKey="Chapman, David C" uniqKey="Chapman D">David C. Chapman</name>
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<author><name sortKey="Oakley, Douglas C" uniqKey="Oakley D">Douglas C. Oakley</name>
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<term>Technologie semiconducteur</term>
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<front><div type="abstract" xml:lang="en">In this paper we study the uniformity of up to 150 mm in diameter wafer-scale III-V epitaxial transfer to the Si-on-insulator substrate through the O<sub>2</sub>
 plasma-enhanced low-temperature (300°C) direct wafer bonding. Void-free bonding is demonstrated by the scanning acoustic microscopy with sub-μm resolution. The photoluminescence (PL) map shows less than 1 nm change in average peak wavelength, and even improved peak intensity (4% better) and full width at half maximum (41 % better) after 150 mm in diameter epitaxial transfer. Small and uniformly distributed residual strain in all sizes of bonding, which is measured by high-resolution X-ray diffraction Omega-2Theta mapping, and employment of a two-period InP- InGaAsP superlattice at the bonding interface contributes to the improvement of PL response. Preservation of multiple quantum-well integrity is also verified by high-resolution transmission electron microscopy.</div>
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 plasma-enhanced low-temperature (300°C) direct wafer bonding. Void-free bonding is demonstrated by the scanning acoustic microscopy with sub-μm resolution. The photoluminescence (PL) map shows less than 1 nm change in average peak wavelength, and even improved peak intensity (4% better) and full width at half maximum (41 % better) after 150 mm in diameter epitaxial transfer. Small and uniformly distributed residual strain in all sizes of bonding, which is measured by high-resolution X-ray diffraction Omega-2Theta mapping, and employment of a two-period InP- InGaAsP superlattice at the bonding interface contributes to the improvement of PL response. Preservation of multiple quantum-well integrity is also verified by high-resolution transmission electron microscopy.</s0>
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Uniformity study of wafer-scale InP-to-silicon hybrid integration

Uniformity study of wafer-scale InP-to-silicon hybrid integration

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri